activity
20152024
most citedAll-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

120 citations · 212 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2024

All-optical scanning vector magnetometry based on fine and hyperfine interactions in spin- centers in silicon carbide

Kirill V. Likhachev, Maxim V. Uchaev, Igor P. Veyshtort +4

The possibility of using axial spin color centers with , oriented along the hexagonal axis in a silicon carbide (SiC) wafer, has been demonstrated for all-optical measur…

quant-ph2021★ 2 cited

Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface

I. D. Breev, Z. Shang, A. V. Poshakinskiy +11

Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon…

cond-mat.mtrl-sci2020★ 17 cited

Electron nuclear interactions and electronic structure of spin 3/2 color centers in silicon carbide: A high-field pulse EPR and ENDOR study

V. A. Soltamov, B. V. Yavkin, A. N. Anisimov +4

High-frequency pulse electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) were used to clarify the electronic structure of the color centers with an…

cond-mat.mtrl-sci2015★ 120 cited

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

D. Simin, V. A. Soltamov, A. V. Poshakinskiy +10

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-SiC) and find extra terms in the spin Hamiltonian, originated from the trigon…

cond-mat.mtrl-sci2015★ 73 cited

Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

V. A. Soltamov, B. V. Yavkin, D. O. Tolmachev +7

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with in rhomb…