I. Proskuryakov

most citedOptically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

73 citations · 73 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2015★ 73 cited

Optically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

V. A. Soltamov, B. V. Yavkin, D. O. Tolmachev +7

We discovered uniaxial oriented centers in silicon carbide having unusual performance. Here we demonstrate that the family of silicon-vacancy related centers with $S = 3/2$ in rhomb…

cond-mat.mtrl-sci2012

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC

Victor A. Soltamov, Alexandra A. Soltamova, Ivan I. Proskuryakov +1

We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies ( $V_{Si}$ ) in silicon carbide (SiC) at ro…