5.3k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Institute of Astronomy and Astrophysics, Academia SinicaTW117 papers
- National Taiwan UniversityTW111 papers
- Centre National de la Recherche ScientifiqueFR98 papers
- National Astronomical Observatory of JapanJP91 papers
- Chinese Academy of SciencesCN90 papers
- The University of TokyoJP88 papers
- California Institute of TechnologyUS86 papers
- Institute of Physics, Academia SinicaTW84 papers
- National Tsing Hua UniversityTW79 papers
- Korea Astronomy and Space Science InstituteKR77 papers
- The Graduate University for Advanced Studies, SOKENDAIJP77 papers
- Peking UniversityCN75 papers
50 papers · 1 filter
Electrothermal control of spin-reorientation transition in Co/Fe_3GaTe_2 heterostructures
Po-Wei Chen, Ming-Hsien Hsu, Cheng-Ying Hsiao +13
Electrical control of magnetic anisotropy in van der Waals (vdWs) magnets is a key step toward reconfigurable two-dimensional spintronics, yet how a conventional metallic ferromagn…
Non-Hermitian topological superconductivity with symmetry-enriched spectral and eigenstate features
Chuo-Kai Chang, Kazuma Saito, Nobuyuki Okuma +2
We investigate a one-dimensional superconducting lattice that realizes all internal symmetries permitted in non-Hermitian systems, characterized by nonreciprocal hopping, onsite di…
Impurity-Induced Interference at a Topological Boundary in an Infinite SSH Heterojunction
Hao-Ru Wu, Hong-Yi Chen, Yiing-Rei Chen
In this work, we investigate the coupling between a strong impurity and the topological boundary of an SSH heterojunction, composed of two SSH chains belonging to different topolog…
Nonlinear photoconductivities and quantum geometry of chiral multifold fermions
Hsiu-Chuan Hsu, Jhih-Shih You, Junyeong Ahn +1
Chiral multifold fermions are quasi-particles that appear only in chiral crystals such as transition metal silicides in the cubic B20 structure (i.e., the CoSi family), and they ma…
Disorder effects on triple-point fermions
Hsiu-Chuan Hsu, Ion Cosma Fulga, Jhih-Shih You
The stability of three-dimensional relativistic semimetals to disorder has recently attracted great attention, but the effect of disorder remains elusive for multifold fermions, th…
Chirality-Induced Noncollinear Magnetization and Asymmetric Domain-Wall Propagation in Hydrogenated CoPd Thin Films
Wei-Hsiang Wang, Ching-Yang Pan, Chak-Ming Liu +2
Array-patterned CoPd-based heterostructures are created through e-beam lithography and plasma pretreatment that induces oxidation with depth gradient in the CoPd alloy films, break…
Winding number and Zak phase in multi-band SSH models
Chen-Shen Lee, Iao-Fai Io, Hsien-chung Kao
We use multi-band SSH models to demonstrate a prescription for calculating the correct Zak phase and winding number of multi-band systems. We verify our prescription by comparing t…
Dynamic Behaviors and Training Effects in TiN/Ti/HfO/TiN Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices
Min-Hsuan Peng, Ching-Yang Pan, Hao-Xuan Zheng +2
Controllable quantized conductance states of TiN/Ti/HfO/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differen…
Supermetal-insulator transition in a non-Hermitian network model
Hui Liu, Jhih-Shih You, Shinsei Ryu +1
We study a non-Hermitian and non-unitary version of the two-dimensional Chalker-Coddington network model with balanced gain and loss. This model belongs to the class D^dagger with…
Infinite Berry Curvature of Weyl Fermi Arcs
Dennis Wawrzik, Jhih-Shih You, Jorge I. Facio +2
We show that Weyl Fermi arcs are generically accompanied by a divergence of the surface Berry curvature scaling as , where is the distance to a hot-line in the surface B…
Plasma-induced magnetic patterning of FePd thin films without and with exchange bias
Wei-Hsiang Wang, Po-Chun Chang, Pei-hsun Jiang +1
We demonstrate control of magnetic domain structures in continuous FePd thin films by patterning their surfaces with plasma treatment. The Fe-oxide layer formed on the surface upon…
Oxidized-monolayer Tunneling Barrier for Strong Fermi-level Depinning in Layered InSe Transistors
Yi-Hsun Chen, Chih-Yi Cheng, Shao-Yu Chen +9
In 2D-semiconductor-based field-effect transistors and optoelectronic devices, metal-semiconductor junctions are one of the crucial factors determining device performance. The Ferm…
Connection between the winding number and the Chern number
Han-Ting Chen, Chia-Hsun Chang, Hsien-chung Kao
Bulk-edge correspondence is one of the most distinct properties of topological insulators. In particular, the 1D winding number $\n$ has a one-to-one correspondence to the number o…
Quantum Trapping on MoS2 through Lifetimes of Resonant Electrons: Revealing Pauli Exclusion Principle
Shin-Ming Lu, Wei-Bin Su, Horng-Tay Jeng +5
We demonstrate that the linewidth of the field emission resonance (FER) observed on the surface of MoS2 using scanning tunneling microscopy can vary by up to one order of magnitude…
Resolving spin, valley, and moiré quasi-angular momentum of interlayer excitons in WSe2/WS2 heterostructures
Chenhao Jin, Emma C. Regan, Danqing Wang +11
Moiré superlattices provide a powerful way to engineer properties of electrons and excitons in two-dimensional van der Waals heterostructures. The moiré effect can be especially st…
High-performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying-barrier-type Indium Electrodes
Yu-Ting Huang, Yi-Hsun Chen, Yi-Ju Ho +10
The electrical contact to two-dimensional (2D)-semiconductor materials are decisive to the electronic performance of 2D-semiconductor field-effect devices (FEDs). The presence of a…
Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors
Wei-Hsiang Wang, Elica Heredia, Syue-Ru Lyu +4
We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltage…
Universal dependence on the channel conductivity of the competing weak localization and antilocalization in amorphous InGaZnO thin-film transistors
Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia +4
We investigate the gate-voltage dependence of the magnetoconductivity of several amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The magnetoconductivity exhibits gate-…
An elementary rigorous proof of bulk-boundary correspondence in the generalized Su-Schrieffer-Heeger model
Bo-Hung Chen, Dah-Wei Chiou
We generalize the Su-Schrieffer-Heeger (SSH) model with the inclusion of arbitrary long-range hopping amplitudes, providing a simple framework to investigate arbitrary adiabatic de…
Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors
Wei-Hsiang Wang, Syue-Ru Lyu, Elica Heredia +5
We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-loca…
Nanodiamond integration with photonic devices
Marina Radulaski, Jingyuan Linda Zhang, Yan-Kai Tzeng +13
We discuss the progress in integration of nanodiamonds with photonic devices for quantum optics applications. Experimental results in GaP, SiO2 and SiC-nanodiamond platforms show t…
New class of 3D topological insulator in double perovskite
Shu-Ting Pi, Hui Wang, Jeongwoo Kim +3
We predict a new class of three-dimensional topological insulators (TIs) in which the spin-orbit coupling (SOC) can more effectively generate a large band gap at point. The ban…
Theory of valley-dependent transport in graphene-based lateral quantum structures
Feng-Wu Chen, Mei-Yin Chou, Yiing-Rei Chen +1
Modulation of electronic states in two-dimensional (2D) materials can be achieved by using in-plane variations of the band gap or the average potential in lateral quantum structure…
Friedel oscillation near a van Hove singularity in two-dimensional Dirac materials
Chi-Ken Lu
We consider Friedel oscillation in the two-dimensional Dirac materials when Fermi level is near the van Hove singularity. Twisted graphene bilayer and the surface state of topologi…