TopGaN (Poland)

output

20152023

most citedComparison of the luminous efficiency of Ga- and N-polar In

_{x}

_{1 - x}

N/In

_{y}

_{1 - y}

N quantum wells grown by plasma-assisted molecular beam epitaxy

18 citations

researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

collaborating institutions

4 papers

cond-mat.mtrl-sci2023★ 10 cited

Coulomb contribution to Shockley-Read-Hall (SRH) recombination

Konrad Sakowski, Pawel Strak, Pawel Kempisty +6

Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep…

cond-mat.mtrl-sci2018★ 7 cited

InN and GaN/InN monolayers grown on ZnO {0001}

Torsten Ernst, Caroline Chèze, Raffaella Calarco

Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of th…

cond-mat.mtrl-sci2017★ 16 cited

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

C. Chèze, F. Feix, J. Lähnemann +6

N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…

cond-mat.mtrl-sci2015★ 18 cited

Comparison of the luminous efficiency of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells grown by plasma-assisted molecular beam epitaxy

Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald +5

We investigate the luminescence of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN a…

Coulomb contribution to Shockley-Read-Hall (SRH) recombination

InN and GaN/InN monolayers grown on ZnO {0001}

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Comparison of the luminous efficiency of Ga- and N-polar Inx​Ga1−x​N/Iny​Ga1−y​N quantum wells grown by plasma-assisted molecular beam epitaxy

Comparison of the luminous efficiency of Ga- and N-polar In $_{x}$ Ga $_{1 - x}$ N/In $_{y}$ Ga $_{1 - y}$ N quantum wells grown by plasma-assisted molecular beam epitaxy