84 citations · 440 across the 12 of their papers we have counts for
12 papers
High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
J. K. Zettler, C. Hauswald, P. Corfdir +5
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire n…
Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
Johannes K. Zettler, Pierre Corfdir, Christian Hauswald +10
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly…
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Comparison of the luminous efficiency of Ga- and N-polar InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy
Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald +5
We investigate the luminescence of Ga- and N-polar InGaN/InGaN quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN a…
Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence
S. Fernández-Garrido, V. M. Kaganer, C. Hauswald +5
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the…
Stacking faults as quantum wells in nanowires: Density of states, oscillator strength and radiative efficiency
P. Corfdir, C. Hauswald, J. K. Zettler +6
We investigate the nature of excitons bound to I1 basal-plane stacking faults [(I1;X)] in GaN nanowire ensembles by continuous-wave and time-resolved photoluminescence spectroscopy…
Investigating the origin of the nonradiative decay of bound excitons in GaN nanowires
Christian Hauswald, Pierre Corfdir, Johannes K. Zettler +9
We investigate the origin of the fast recombination dynamics of bound and free excitons in GaN nanowire ensembles by temperature-dependent photoluminescence spectroscopy using both…
Sub-meV linewidth in GaN nanowire ensembles: absence of surface excitons due to the field-ionization of donors
Pierre Corfdir, Johannes K. Zettler, Christian Hauswald +3
We observe unusually narrow donor-bound exciton transitions (0.4 meV) in the photoluminescence spectra of GaN nanowire ensembles grown on Si(111) substrates at very high (> 850 deg…
Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy
Jonas Lähnemann, Christian Hauswald, Martin Wölz +4
(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emi…
Coupling of exciton states as the origin of their biexponential decay dynamics in GaN nanowires
Christian Hauswald, Timur Flissikowski, Tobias Gotschke +4
Using time-resolved photoluminescence spectroscopy, we explore the transient behavior of bound and free excitons in GaN nanowire ensembles. We investigate samples with distinct dia…
Correlation between In content and emission wavelength of InGaN/GaN nanowire heterostructures
Martin Wölz, Jonas Lähnemann, Oliver Brandt +7
GaN nanowire ensembles with axial InGaN multi-quantum wells (MQWs) were grown by molecular beam epitaxy. In a series of samples, we varied the In content in the MQWs from almost ze…
Current path in light emitting diodes based on nanowire ensembles
Friederich Limbach, Christian Hauswald, Jonas Lähnemann +8
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam…