34 citations · 110 across the 13 of their papers we have counts for
14 papers
Micro-transfer Printed Blue InGaN Lasers on Silicon Nitride Photonic Integrated Circuits
Konstantinos Akritidis, Krzysztof Gibasiewicz, Han Wang +8
Expanding integrated photonics into the blue spectral range requires high-performance light sources, making the gallium nitride (GaN) material family indispensable. While silicon n…
Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters
Nilesh Dalla, Paweł Kulboka, Michał Kobecki +6
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and compositi…
Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
Shivali Agrawal, Hsin-Wei S. Huang, Debaditya Bhattacharya +6
UV-C LEDs pseudomorphically grown by MBE on bulk AlN substrates emitting at 265 nm are demonstrated. High current density up to 800 A/cm, 5 orders of on/off ratio, and low diff…
Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
Nilesh Dalla, Paweł Kulboka, Michał Kobecki +5
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of differe…
Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Paweł Wolny, Henryk Turski, Grzegorz Muziol +6
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) ha…
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…
Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells
Michał Jarema, Marta Gładysiewicz, Łukasz Janicki +5
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electr…
Highly efficient optical transition between excited states in wide InGaN quantum wells
Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…
Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
Henryk Turski, Shyam Bharadwaj, Huili +2
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quan…
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…
Miscut dependent surface evolution in the process of N-polar GaN growth under N-rich condition
Filip Krzyzewski, Magdalena A. Zaluska-Kotur, Henryk Turski +2
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2…