34 citations · 110 across the 13 of their papers we have counts for
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Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters
Nilesh Dalla, Paweł Kulboka, Michał Kobecki +6
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and compositi…
Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
Nilesh Dalla, Paweł Kulboka, Michał Kobecki +5
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of differe…
Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee +8
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN…
Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
C. Chèze, F. Feix, J. Lähnemann +6
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhi…
Miscut dependent surface evolution in the process of N-polar GaN growth under N-rich condition
Filip Krzyzewski, Magdalena A. Zaluska-Kotur, Henryk Turski +2
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2…