34 citations · 110 across the 13 of their papers we have counts for
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Leveraging both faces of polar semiconductor wafers for functional devices
Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski +8
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a un…
Electrically pumped blue laser diodes with nanoporous bottom cladding
Marta Sawicka, Grzegorz Muziol, Natalia Fiuczek +8
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitax…
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Shyam Bharadwaj, Jeffrey Miller, Kevin Lee +6
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in…
Highly efficient optical transition between excited states in wide InGaN quantum wells
Grzegorz Muziol, Henryk Turski, Marcin Siekacz +6
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet…
Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
Henryk Turski, Shyam Bharadwaj, Huili +2
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quan…