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6 papers · 2 filters
Reduction of Magnetic Interaction Due to Clustering in Doped Transition-Metal Dichalcogenides: A Case Study of Mn, V, Fe-Doped
Sabyasachi Tiwari, Maarten Van de Put, Bart Soree +2
Using Hubbard U corrected density functional theory calculations, lattice Monte-Carlo, and spin-Monte-Carlo simulations, we investigate the impact of dopant clustering on the magne…
Confinement-Induced Isosymmetric Metal-Insulator Transition in Ultrathin Epitaxial V2O3 Films
Simon Mellaerts, Claudio Bellani, Wei-Fan Hsu +9
Dimensional confinement has shown to be an effective strategy to tune competing degrees of freedom in complex oxides. Here, we achieved atomic layered growth of trigonal vanadium s…
Guiding principles for the design of a chemical vapor deposition process for highly crystalline transition metal dichalcogenides
Vladislav Voronenkov, Benjamin Groven, Henry Medina Silva +2
Two-dimensional transition metal dichalcogenides (TMDs) for advanced logic transistor technologies are deposited by various modifications of the chemical vapor deposition (CVD) met…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…
Analysis of ultrafast magnetization switching dynamics in exchange-coupled ferromagnet-ferrimagnet heterostructures
Debanjan Polley, Jyotirmoy Chatterjee, Hyejin Jang +1
Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetizati…
Dilute Rhenium Doping and its Impact on Intrinsic Defects in MoS2
Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi +11
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic ci…