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6 papers · 2 filters
Low charge noise quantum dots with industrial CMOS manufacturing
Asser Elsayed, Mohamed Shehata, Clement Godfrin +12
Silicon spin qubits are among the most promising candidates for large scale quantum computers, due to their excellent coherence and compatibility with CMOS technology for upscaling…
Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Arnout Beckers, Jakob Michl, Alexander Grill +7
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance comp…
Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Inge Groen, Van Tuong Pham, Stefan Ilić +10
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such…
Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device
M. Thesberg, Z. Stanojevic, O. Baumgartner +14
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formu…
Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
M. Mohamed El Kordy Shehata, George Simion, Ruoyu Li +7
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of existing CMOS integra…
Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque
Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel +5
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of…