output
20002025
most citedCritical phenomena in complex networks

2.3k citations

Showing cond-mat.mtrl-sciShow all

53 papers · 1 filter

cond-mat.mtrl-sci2020★ 3 cited

Symmetry breaking in single crystal SrTiO plates: EPR manifestations

Bulat F. Gabbasov, Irina N. Gracheva, Alexander A. Rodionov +6

Electron paramagnetic resonance studies of the impurity Fe and Mn centers indicate that the symmetry of the crystal structure of millimeter-scale strontium titanate p…

cond-mat.mtrl-sci2019★ 21 cited

Two modes of HVPE growth of GaN and related macrodefects

V. V. Voronenkov, N. I. Bochkareva, R. I. Gorbunov +9

GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mo…

cond-mat.mtrl-sci2018★ 10 cited

Viscosity of Cobalt Melt: Experiment, Simulation, and Theory

R. M. Khusnutdinoff, A. V. Mokshin, A. L. Bel'tyukov +1

The results of experimental measurements, molecular dynamics simulation, and theoretical calculations of the viscosity of a cobalt melt in a temperature range of ~K at a…

cond-mat.mtrl-sci2017

High resolution resonant inelastic EUV scattering from orbital excitations in a Heisenberg antiferromagnet

Antonio Caretta, Martina Dell'Angela, Yi-De Chuang +11

We report the high resolution resonant inelastic EUV scattering study of quantum Heisenberg antiferromagnet KCoF3. By tuning the EUV photon energy to cobalt M23 edge, a complete se…

cond-mat.mtrl-sci2016★ 115 cited

Optical thermometry based on level anticrossing in silicon carbide

A. N. Anisimov, D. Simin, V. A. Soltamov +4

We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…

cond-mat.mtrl-sci2015★ 19 cited

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Meng Qi, Guowang Li, Vladimir Protasenko +10

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…