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20132021
most citedShaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulation

55 citations

Showing 2021Show all

5 papers · 1 filter

cond-mat.mes-hall2021★ 8 cited

Ballistic injection terahertz plasma instability in graphene n+-i-n-n+ field-effect transistors and lateral diodes

V. Ryzhii, M. Ryzhii, A. Satou +3

We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momen…

cond-mat.mes-hall2021★ 11 cited

Effect of Coulomb carrier drag and terahertz plasma instability in p+-p-i-n-n+ graphene tunneling transistor structures

V. Ryzhii, M. Ryzhii, A. Satou +3

We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due t…

cond-mat.mes-hall2021★ 16 cited

Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection

V. Ryzhii, M. Ryzhii, V. Mitin +2

We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is…

cond-mat.mes-hall2021★ 22 cited

S-shaped current-voltage characteristics of n+-i-n-n+ graphene field-effect transistors due the Coulomb drag of quasi-equilibrium electrons by ballistic electrons

V. Ryzhii, M. Ryzhii, V. Mitin +2

We demonstrate that the injection of the ballistic electrons into the two-dimensional electron plasma in lateral n-i-n-n graphene field-effect transistors (G-FET) might lea…

cond-mat.mes-hall2021★ 16 cited

Modulation characteristics of uncooled graphene photodetectors

V. Ryzhii, M. Ryzhii, T. Otsuji +3

We analyze the modulation characteristics of the uncooled terahertz (THz) and infrared (IR) detectors using the variation of the density and effective temperature of the two-dimens…