420 citations
- University of AugsburgDE7 papers
- Russian Academy of SciencesRU6 papers
- Centre National de la Recherche ScientifiqueFR5 papers
- Lomonosov Moscow State UniversityRU5 papers
- Moscow Power Engineering InstituteRU4 papers
- California State University, BakersfieldUS3 papers
- P.N. Lebedev Physical Institute of the Russian Academy of SciencesRU3 papers
- Université Clermont AuvergneFR3 papers
- University of WarwickGB3 papers
- University of WürzburgDE3 papers
- Center for Integrated Quantum Science and TechnologyDE2 papers
- Eindhoven University of TechnologyNL2 papers
13 papers · 1 filter
Pinning of magnetic domain walls in multiferroics
Z. V. Gareeva, A. K. Zvezdin
The behavior of antiferromagnetic domain wall (ADW) against the background of a periodic ferroelectric domain structure has been investigated. It has been shown that the structure…
The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays
I. V. Kucherenko, V. S. Vinogradov, N. N. Mel'nik +4
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single h…
Cathodoluminescence and Selective Emission of Er3+ in Oxides
V. M. Marchenko, M. G. Voitik, V. A. Yuryev
The dependence of the Er3+ cathodoluminescence and selective emission on the power of the YAG:Er3+ and Er2O3 excitation by an electron beam is spectroscopically studied for applica…
Performance of ZnMoO4 crystal as cryogenic scintillating bolometer to search for double beta decay of molybdenum
L. Gironi, C. Arnaboldi, J. W. Beeman +10
Zinc molybdate (ZnMoO4) single crystals were grown for the first time by the Czochralski method and their luminescence was measured under X ray excitation in the temperature range…
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
L. V. Arapkina, V. A. Yuryev
We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sampl…