420 citations
- Moscow Institute of Physics and TechnologyRU30 papers
- Lomonosov Moscow State UniversityRU20 papers
- National Research University Higher School of EconomicsRU20 papers
- Russian Academy of SciencesRU17 papers
- Centre National de la Recherche ScientifiqueFR13 papers
- P.N. Lebedev Physical Institute of the Russian Academy of SciencesRU12 papers
- National Research Nuclear University MEPhIRU8 papers
- University of AugsburgDE8 papers
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicCZ7 papers
- Moscow Power Engineering InstituteRU7 papers
- Skolkovo Institute of Science and TechnologyRU7 papers
- Frantsevich Institute for Problems in Materials ScienceUA6 papers
11 papers · 1 filter
Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
T. V. Pavlova, V. M. Shevlyuga
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applicatio…
PBr3 Adsorption and Dissociation on the Si(100) Surface
Vladimir M. Shevlyuga, Yulia A. Vorontsova, Tatiana V. Pavlova
The adsorption of PBr3 on the Si(100)-21 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissoc…
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…
Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
T. V. Pavlova
The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impu…
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…
High-resolution luminescence spectroscopy of CaWO:Ho: Sensitive detection of internal strains, temperature, and magnetic field
M. N. Popova, M. Diab, N. N. Kuzmin +3
We carried out high-resolution (0.02 cm-1) measurements of the photoluminescence (PL) spectra of CaWO4:Ho3+, including in magnetic field, and performed spectra modeling. Well-resol…