921 citations
- A. Zvezdin2 profiles56 · h 39
- V. Yuryev40 · h 13
- A. Mukhin2 profiles36 · h 31
- A. Pimenov4 profiles34 · h 29
- A. Loidl3 profiles30 · h 69
- N. Sluchanko2 profiles29 · h 20
- N. Gippius2 profiles27 · h 26
- S. V. Bulanov27 · h 59
- A. Pronin2 profiles26 · h 21
- L. V. Arapkina24 · h 11
- K. Zvezdin2 profiles23 · h 15
- N. Shitsevalova22 · h 25
- Russian Academy of SciencesRU239 papers
- Moscow Institute of Physics and TechnologyRU111 papers
- Lomonosov Moscow State UniversityRU73 papers
- P.N. Lebedev Physical Institute of the Russian Academy of SciencesRU46 papers
- Centre National de la Recherche ScientifiqueFR45 papers
- National Research University Higher School of EconomicsRU36 papers
- University of AugsburgDE35 papers
- National Research Nuclear University MEPhIRU30 papers
- University of StuttgartDE28 papers
- Frantsevich Institute for Problems in Materials ScienceUA26 papers
- Kansai Institute for Photon ScienceJP23 papers
- Moscow Power Engineering InstituteRU22 papers
149 papers · 1 filter
STM study of single phosphorus incorporation into silicon by heating PBr3 on Si(100)
Tatiana V. Pavlova, Vladimir M. Shevlyuga
The objective of miniaturizing doped areas in silicon, with the ultimate goal of achieving atomic-precision doping, requires a fundamental understanding of the dopant incorporation…
Terahertz optical activity near crystal field transitions of Tm3+ ions in magnetoelectric alumoborates
A. M. Kuzmenko, V. Yu. Ivanov, S. V. Garnov +5
Crystal field (CF) excitations in the ground multiplet of Tm ions were investigated using terahertz transmission spectra of magnetoelectric TmAl(BO) and…
Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
T. V. Pavlova, V. M. Shevlyuga
Silicon dangling bonds (DBs) on an adsorbate-covered Si(100) surface can be created in a scanning tunneling microscope (STM) with high precision required for a number of applicatio…
PBr3 Adsorption and Dissociation on the Si(100) Surface
Vladimir M. Shevlyuga, Yulia A. Vorontsova, Tatiana V. Pavlova
The adsorption of PBr3 on the Si(100)-21 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissoc…
Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
T. V. Pavlova, V. M. Shevlyuga
Dangling bonds (DBs) are common defects in silicon that affect its electronic performance by trapping carriers at the in-gap levels. For probing the electrical properties of indivi…
Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
T. V. Pavlova
The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impu…