294 citations
- RWTH Aachen UniversityDE9 papers
- Technical University of MunichDE8 papers
- AMO (Germany)DE7 papers
- Infineon Technologies (Austria)AT7 papers
- Aston UniversityGB5 papers
- Hospital de Santa CruzPT4 papers
- Infinera (United States)US4 papers
- Technische Universität DresdenDE3 papers
- Télécom ParisFR3 papers
- TU WienAT3 papers
- University College LondonGB3 papers
- University of ViennaAT3 papers
7 papers · 1 filter
SOT Enabled 3D Magnetic Field Sensor with Low Offset and High Sensitivity
Sebastian Zeilinger, Johannes Güttinger, Klemens Prügl +10
In this work we demonstrate a spin-orbit torque (SOT) magnetic field sensor, designed as a Ta/CoFeB/MgO structure, with high sensitivity and capable of active offset compensation i…
Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
Till Huckemann, Pascal Muster, Wolfram Langheinrich +12
This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon…
Single device offset-free magnetic field sensing principle with tunable sensitivity and linear range based on spin-orbit-torques
Sabri Koraltan, Christin Schmitt, Florian Bruckner +12
We propose a novel device concept using spin-orbit-torques to realize a magnetic field sensor, where we eliminate the sensor offset using a differential measurement concept. We der…
Integrating Graphene into Semiconductor Fabrication Lines
Daniel Neumaier, Stephan Pindl, Max C. Lemme
Electronic and photonic devices based on the two-dimensional material graphene have unique properties, leading to outstanding performance figures-of-merit. Mastering the integratio…
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Grzegorz Lupina, Julia Kitzmann, Ioan Costina +15
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform mus…
NBTI in Nanoscale MOSFETs - The Ultimate Modeling Benchmark
Tibor Grasser, Karina Rott, Hans Reisinger +3
After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reacti…