output
19922026
researchers with a paper here

Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

collaborating institutions
Showing 2015 · cond-mat.mes-hallShow all

6 papers · 2 filters

cond-mat.mes-hall2015★ 359 cited

Exciton Diamagnetic Shifts and Valley Zeeman Effects in Monolayer WS and MoS to 65 Tesla

Andreas V. Stier, Kathleen M. McCreary, Berend T. Jonker +2

We report circularly-polarized optical reflection spectroscopy of monolayer WS and MoS at low temperatures (4~K) and in high magnetic fields to 65~T. Both the A and the B e…

cond-mat.mes-hall2015★ 154 cited

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

Tingxin Li, Pengjie Wang, Hailong Fu +8

We report on the observation of a helical Luttinger-liquid in the edge of InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temper…

cond-mat.mes-hall2015★ 191 cited

Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells

Lingjie Du, Wenkai Lou, Kai Chang +2

It was proposed that a dilute semimetal is unstable against the formation of an exciton insulator, however experimental confirmations have remained elusive. We investigate the orig…

cond-mat.mes-hall2015★ 30 cited

Helical Quantum Edge Gears in 2D Topological Insulators

Yang-Zhi Chou, Alex Levchenko, Matthew S. Foster

We show that two-terminal transport can measure the Luttinger liquid (LL) parameter , in helical LLs at the edges of two dimensional topological insulators (TIs) with Rashba spi…

cond-mat.mes-hall2015★ 59 cited

Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

J. Hu, X. Liu, C. L. Yue +14

The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcog…

cond-mat.mes-hall2015★ 132 cited

Hall and field-effect mobilities in few layered -WSe field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran +9

Here, we present a temperature () dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe exfoliated onto SiO.…