Grace (Canada)

output

20132024

most citedDislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

10 citations

researchers with a paper here

D. Jena6 · h 85
H. Xing6 · h 75
Debdeep Jena4
V. Protasenko3 · h 35
L. van Deurzen2 · h 9
Ryan Page2 · h 8
Xiaowei Yue2 profiles2 · h 19
A. Lal1 · h 24
A. Mehta1 · h 3
Arjan Singh1 · h 8
Benyamin Davaji1 · h 12
Caroline Duchaine1 · h 5

collaborating institutions

Cornell UniversityUS3 papers
Forschungsverbund BerlinDE1 paper
Grace (United States)US1 paper
Idaho State UniversityUS1 paper
Institute of High Pressure PhysicsPL1 paper
Paul Drude Institute for Solid State ElectronicsDE1 paper
Polish Academy of SciencesPL1 paper

Showing physics.app-phShow all

2 papers · 1 filter

physics.app-ph2023

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7

Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…

physics.app-ph2020

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$ -Ga $_{2}$ O $_{3}$

Arjan Singh, Okan Koksal, Nicholas Tanen +6

$β$ -Ga $_{2}$ O $_{3}$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to t…

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Intra- and Inter-Conduction Band Optical Absorption Processes in β-Ga2​O3​

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$ -Ga $_{2}$ O $_{3}$