4 citations · 5 across the 4 of their papers we have counts for
4 papers
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…
Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss
Len van Deurzen, Ryan Page, Vladimir Protasenko +3
We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structu…
Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures
Joseph Casamento, Ved Gund, Hyunjea Lee +11
Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial fil…
A Surface-Potential Based Compact Model for GaN HEMTs Directly Incorporating Polarization Charges
Raj K. Jana, Huili, Xing +1
A method to incorporate polarization charges at heterojunctions in compact models for transistors is presented. By including the polarization sheet charge as a Dirac delta function…