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- TU WienAT2 papers
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- Centre National de la Recherche ScientifiqueFR1 paper
- Christian Doppler Laboratory for ThermoelectricityAT1 paper
- HRL Laboratories (United States)US1 paper
- Institute of Physics BelgradeRS1 paper
- International Solar Energy Research Center KonstanzDE1 paper
- Laboratoire de Génie Électrique et Électronique de ParisFR1 paper
- Material (Belgium)BE1 paper
- SupélecFR1 paper
- Universitat Politècnica de ValènciaES1 paper
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cond-mat.mtrl-sci2026
The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers
Sabine Leroch, Robert Stella, Andreas Hössinger +1
The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed, but its atomistic origin remains unclear. We present a…
cond-mat.mtrl-sci2015
Multiscale approaches to high efficiency photovoltaics
J. P. Connolly, Lejo J. Koduvelikulathu, D. Mencaraglia +3
While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency…