3 papers
physics.chem-ph2026
Surface chemistry as data for level-set simulation of etching and deposition
Lado Filipovic, Tobias Reiter, Philipp Haslhofer
Level-set simulators of etching and deposition move the surface with a velocity that depends on adsorbate coverages. These coverages are usually computed from balances solved and c…
cond-mat.mtrl-sci2026
Faulted loop nucleation and dopant activation in Al-implanted 4H-SiC
Sabine Leroch, Robert Stella, Andreas Hössinger +1
We present a molecular dynamics (MD) study of Al implantation in 4H-SiC to determine how implantation temperature and dose affect defect evolution and dopant activation during anne…
cond-mat.mtrl-sci2026
The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers
Sabine Leroch, Robert Stella, Andreas Hössinger +1
The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed, but its atomistic origin remains unclear. We present a…