The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers

Sabine Leroch, Robert Stella, Andreas Hössinger +1

The non-monotonic dependence of Al dopant activation on implantation temperature in 4H-SiC has been experimentally observed, but its atomistic origin remains unclear. We present a…