activity
20172025
most citedElectronic bandstructure of in-plane ferroelectric van der Waals

43 citations · 106 across the 7 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci20207 cited

Long-Range Surface-Assisted Molecule-Molecule Hybridization

Marina Castelli, Jack Hellerstedt, Cornelius Krull +4

Metalated phthalocyanines (Pc's) are robust and versatile molecular complexes, whose properties can be tuned by changing their functional groups and central metal atom. The electro…

cond-mat.mtrl-sci2020

Quantum Transport in Air-stable Na3Bi Thin Films

Chang Liu, Golrokh Akhgar, James L. Collins +4

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological i…

cond-mat.mtrl-sci201943 cited

Electronic bandstructure of in-plane ferroelectric van der Waals

James L. Collins, Chutian Wang, Anton Tadich +11

Layered indium selenides () have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the and ' phases, respectively. In this…

cond-mat.mtrl-sci2018

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

James L. Collins, Anton Tadich, Weikang Wu +11

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In thi…

cond-mat.mtrl-sci201710 cited

Temperature Dependent n-p Transition of 3 Dimensional Dirac Semimetal NaBi Thin Film

Chang Liu, Jack Hellerstedt, Mark T. Edmonds +1

We study the temperature dependence ( K - K) of the longitudinal resistivity and Hall coefficient of thin films (thickness nm) of three dimensional topological Dirac…

cond-mat.mtrl-sci201712 cited

Electrostatic Modulation of the Electronic Properties of Dirac Semimetal Na3Bi

Jack Hellerstedt, Indra Yudhistira, Mark T. Edmonds +4

Large-area thin films of topological Dirac semimetal NaBi are grown on amorphous SiO:Si substrates to realise a field-effect transistor with the doped Si acting as back gat…