activity
20172022
most citedElectronic bandstructure of in-plane ferroelectric van der Waals

43 citations · 106 across the 6 of their papers we have counts for

collaborators

10 papers

cond-mat.str-el2021

Manifestation of strongly correlated electrons in a 2D kagome metal-organic framework

Dhaneesh Kumar, Jack Hellerstedt, Bernard Field +4

The kagome lattice, whose electronic valence band (VB) structure includes two Dirac bands and one flat band, offers a rich space to realise tuneable topological and strongly correl…

cond-mat.mtrl-sci20207 cited

Long-Range Surface-Assisted Molecule-Molecule Hybridization

Marina Castelli, Jack Hellerstedt, Cornelius Krull +4

Metalated phthalocyanines (Pc's) are robust and versatile molecular complexes, whose properties can be tuned by changing their functional groups and central metal atom. The electro…

cond-mat.mtrl-sci2020

Quantum Transport in Air-stable Na3Bi Thin Films

Chang Liu, Golrokh Akhgar, James L. Collins +4

Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological i…

cond-mat.mtrl-sci201943 cited

Electronic bandstructure of in-plane ferroelectric van der Waals

James L. Collins, Chutian Wang, Anton Tadich +11

Layered indium selenides () have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the and ' phases, respectively. In this…

cond-mat.mes-hall2018

On-Surface Structural and Electronic Properties of Spontaneously Formed TbPc Single Molecule Magnets

Jack Hellerstedt, Aleš Cahlík, Martin Švec +8

The single molecule magnet (SMM) bis(phthalocyaninato)terbium (III) (TbPc) has attracted steady research attention as an exemplar system for realizing molecule-based spin elect…

cond-mat.mtrl-sci2018

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

James L. Collins, Anton Tadich, Weikang Wu +11

The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In thi…