Jack Hellerstedt

most citedElectronic bandstructure of in-plane ferroelectric van der Waals

β^{'} - I n_{2} S e_{3}

43 citations · 64 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2019★ 43 cited

Electronic bandstructure of in-plane ferroelectric van der Waals $β^{'} - I n_{2} S e_{3}$

James L. Collins, Chutian Wang, Anton Tadich +11

Layered indium selenides ( $I n_{2} S e_{3}$ ) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$ ' phases, respectively. In this…

cond-mat.mtrl-sci2014★ 21 cited

Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi $_{2}$ Se $_{3}$

Jack Hellerstedt, Mark Edmonds, J. H. Chen +3

Bismuth selenide Bi $_{2}$ Se $_{3}$ was grown by molecular beam epitaxy while carrier density and mobility were measured directly \emph{in situ} as a function of film thickness. Carrier…

Electronic bandstructure of in-plane ferroelectric van der Waals β′−In2​Se3​

Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi2​Se3​

Electronic bandstructure of in-plane ferroelectric van der Waals $β^{'} - I n_{2} S e_{3}$

Thickness and growth-condition dependence of \emph{in-situ} mobility and carrier density of epitaxial thin-film Bi $_{2}$ Se $_{3}$