activity
20172021
most citedTailoring the electronic properties of CaRuO via epitaxial strain

35 citations · 76 across the 5 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci202114 cited

Control of the metal-insulator transition in NdNiO thin films through the interplay between structural and electronic properties

Y. E. Suyolcu, K. Fürsich, M. Hepting +10

Heteroepitaxy offers a new type of control mechanism for the crystal structure, the electronic correlations, and thus the functional properties of transition-metal oxides. Here, we…

cond-mat.supr-con20205 cited

Approaching two-dimensional superconductivity in ultrathin DyBaCuO

R. D. Dawson, K. S. Rabinovich, D. Putzky +4

The temperature dependence of the superfluid density has been measured for a series of ultrathin MBE-grown DyBaCuO superconducting (SC) films by sub-mm wav…

cond-mat.str-el2020

Inhomogeneous ferromagnetism mimics signatures of the topological Hall effect in SrRuO films

Gideok Kim, K. Son, Y. E. Suyolcu +11

Topological transport phenomena in magnetic materials are a major topic of current condensed matter research. One of the most widely studied phenomena is the ``topological Hall eff…

cond-mat.supr-con2020

Imprint of charge and oxygen orders on Dy ions in DyBaCuO thin films probed by resonant x-ray scattering

Davide Betto, Martin Bluschke, Daniel Putzky +8

We used resonant elastic x-ray scattering at the Cu and Dy edges to investigate charge order in thin films of underdoped DyBaCuO (DyBCO) epitaxially gro…

cond-mat.supr-con201914 cited

Electronic and vibrational signatures of ruthenium vacancies in SrRuO thin films

Gideok Kim, Y. Eren Suyolcu, J. Herrero-Martin +12

The synthesis of stoichiometric SrRuO thin films has been a challenge because of the high volatility of ruthenium oxide precursors, which gives rise to ruthenium vacancies…

cond-mat.str-el2019

Tunable perpendicular exchange bias in oxide heterostructures

Gideok Kim, Yury Khaydukov, Martin Bluschke +9

The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane…