Comparative study of LaNiO/LaAlO heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy
arXiv:1701.05366 · doi:10.1063/1.4975005
Abstract
Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity, microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults, but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of deposition technique for perovskite oxides.
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Cited by in corpus (8)
- Aspects of the Synthesis of Thin Film Superconducting Infinite-Layer Nickelates
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- Machine Learning Analysis of Perovskite Oxides Grown by Molecular Beam Epitaxy
- Confinement- and strain-induced enhancement of thermoelectric properties in LaNiO/LaAlO superlattices
- Engineering mass transport properties in oxide ionic and mixed ionic electronic thin film ceramic conductors for energy applications
- Digital modulation of the nickel valence state in a cuprate-nickelate heterostructure
- Two-dimensional type-II Dirac fermions in a LaAlO3/LaNiO3/LaAlO3 quantum well
- Enabling two-dimensional electron gas with high room-temperature electron mobility exceeding 100 cm/Vs at a perovskite oxide interface