Tunable perpendicular exchange bias in oxide heterostructures
arXiv:1909.06152 · doi:10.1103/PhysRevMaterials.3.084420
Abstract
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has proven remarkably difficult to realize perpendicular exchange bias in thin-film structures. Here we demonstrate a strong perpendicular exchange bias effect in heterostructures of the quasi-two-dimensional canted antiferromagnet LaCuO and ferromagnetic (La,Sr)MnO synthesized by ozone-assisted molecular beam epitaxy. The magnitude of this effect can be controlled via the doping level of the cuprate layers. Canted antiferromagnetism of layered oxides is thus a new and potentially powerful source of uniaxial anisotropy in magnetic devices.
7 pages, 5 figures
References in corpus (10)
- Interface ferromagnetism and orbital reconstruction in BiFeO3- La0.7Sr0.3MnO3 heterostructures
- The metal-insulator transition and its relation to magnetic structure in (LaMnO3)2n/(SrMnO3)n superlattices
- Exchange Bias Effects in Iron Oxide-Based Nanoparticle Systems
- Magnetically asymmetric interfaces in a (LaMnO)/(SrMnO) superlattice due to structural asymmetries
- Crystal structure and high-field magnetism of La2CuO4
- Giant perpendicular exchange bias with antiferromagnetic MnN
- Steadfast perpendicular exchange coupling in an ultrathin CoO/PtFe double-layer: strain and spin orientation
- Digital modulation of the nickel valence state in a cuprate-nickelate heterostructure
- Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces
- X-ray absorption spectroscopy study of the electronic and magnetic proximity effects in YBaCuO/LaCaMnO and LaSrCuO/LaCaMnO multilayers