Selective formation of apical oxygen vacancies in LaSrCuO
arXiv:1909.06140 · doi:10.1103/PhysRevMaterials.1.054801
Abstract
The superconducting properties of high-\tc\ materials are functions of carriers concentration, which is controlled by the concentration of defects including heterovalent cations, interstitial oxygen ions, and oxygen vacancies. Here we combine low-temperature thermal treatment of LaSrCuO epitaxial thin films and confocal Raman spectroscopy to control and investigate oxygen vacancies. We demonstrate that the apical site is the most favorable position to accommodate oxygen vacancies under low-temperature annealing conditions. Additionally we show that in high-quality films of overdoped LaSrCuO, oxygen vacancies strongly deform the oxygen environment around the copper ions. This observation is consistent with previous defect-chemical studies, and calls for further investigation of the defect induced properties in the overdoped regime of the hole-doped lanthanum cuprates.
arXiv comment5 pages, 3 figures
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- Magnetotransport in overdoped LaSrCuO: Effect of anisotropic scattering