320 citations · 969 across the 31 of their papers we have counts for
13 papers · 1 filter
Probing the features of electron dispersion by tunneling between slightly twisted bilayer graphene sheets
Alexey A. Sokolik, Azat F. Aminov, Evgenii E. Vdovin +6
Tunneling conductance between two bilayer graphene (BLG) sheets separated by 2 nm-thick insulating barrier was measured in two devices with the twist angles between BLGs less than…
Nanopatterning of multicomponent van der Waals heterostructures using atomic force microscopy
A. L. Shilov, L. Elesin, A. Grebenko +10
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning tec…
Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier
Dmitry A. Mylnikov, Mikhail A. Kashchenko, Kirill N. Kapralov +7
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this…
Anomalous optical response of graphene on hexagonal boron nitride substrates
Adilet Toksumakov, Georgy Ermolaev, Mikhail Tatmyshevskiy +10
Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. How…
Twisted monolayer and bilayer graphene for vertical tunneling transistors
Davit A. Ghazaryan, Abhishek Misra, Evgenii E. Vdovin +5
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron ni…
Field-induced insulating states in a graphene superlattice
S. Pezzini, S. Wiedmann, A. Mishchenko +5
We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré mod…
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Gwangwoo Kim, Sung-Soo Kim, Jonghyuk Jeon +18
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the p…
Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
M. T. Greenaway, E. E. Vdovin, D. Ghazaryan +17
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised sta…
Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
Davit Ghazaryan, Mark T. Greenaway, Zihao Wang +14
The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular in…
Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air
Seok-Kyun Son, Makars Šiškins, Ciaran Mullan +12
The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Altho…
Stacking transition in bilayer graphene caused by thermally activated rotation
Mengjian Zhu, Davit Ghazaryan, Seok-Kyun Son +8
Crystallographic alignment between two-dimensional crystals in van der Waals heterostructures brought a number of profound physical phenomena, including observation of Hofstadter b…
Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
J. R. Wallbank, D. Ghazaryan, A. Misra +15
Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, suc…
Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
E. E. Vdovin, A. Mishchenko, M. T. Greenaway +12
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages be…