1 citations · 2 across the 2 of their papers we have counts for
3 papers
physics.app-ph2019★ 2 cited
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
Fengwen Mu, Zhe Cheng, Jingjing Shi +5
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…
cond-mat.mtrl-sci2017★ 1 cited
Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport
John T. Gaskins, George Kotsonis, Ashutosh Giri +13
We present experimental measurements of the thermal boundary conductance (TBC) from K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data pro…
cond-mat.mes-hall2017★ 1 cited
Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance
Zhe Cheng, Thomas Bougher, Tingyu Bai +7
The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance…