25 citations · 40 across the 9 of their papers we have counts for
6 papers · 1 filter
Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films
Luke Yates, Zhe Cheng, Tingyu Bai +6
As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate…
Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices
Zhe Cheng, Fengwen Mu, Luke Yates +2
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless c…
Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
Zhe Cheng, Virginia D. Wheeler, Tingyu Bai +6
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from…
Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces
Zhe Cheng, Yee Rui Koh, Habib Ahmad +17
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfac…
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
Fengwen Mu, Zhe Cheng, Jingjing Shi +5
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…
Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices
Zhe Cheng, Nicholas Tanen, Celesta Chang +6
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable subst…