203 citations · 1.2k across the 24 of their papers we have counts for
8 papers · 1 filter
Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation
Pradip Basnet, Darshan G Pahinkar, Matthew P. West +3
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal e…
Experimental Observation of High Intrinsic Thermal Conductivity of AlN
Zhe Cheng, Yee Rui Koh, Abdullah Mamun +17
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is th…
Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices
Zhe Cheng, Fengwen Mu, Luke Yates +2
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless c…
Integration of Atomic Layer Epitaxy Crystalline Ga2O3 on Diamond for Thermal Management
Zhe Cheng, Virginia D. Wheeler, Tingyu Bai +6
Ga2O3 has attracted great attention for electronic device applications due to its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from…
Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces
Zhe Cheng, Yee Rui Koh, Habib Ahmad +17
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfac…
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
Fengwen Mu, Zhe Cheng, Jingjing Shi +5
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…