◍wovepaper
SearchResearchersInstitutions
Sign in
researcher

S. Graham

24 papers hereh-index 6114.3k citations344 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author8
  • last author14

Across the 22 of 24 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci11
  • cond-mat.mes-hall7
  • physics.app-ph6
same name
  • S. Graham — 23 papers, h 30
  • S. Graham — 6 papers, h 4
  • S. Graham — 3 papers, h 4
  • S. Graham — 3 papers, h 6
  • S. Graham — 2 papers, h 14
  • S. Graham — 2 papers, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20132022
most citedHigh Thermal Conductivity in Wafer Scale Cubic Silicon Carbide Crystals

203 citations · 1.2k across the 24 of their papers we have counts for

collaborators
Showing 2017Show all

3 papers · 1 filter

cond-mat.mes-hall2017★ 11 cited

Thermal Rectification in CVD Diamond Membranes Driven by Gradient Grain Structure

Zhe Cheng, Brian M. Foley, Thomas Bougher +3

As one of the basic components of phononics, thermal diodes transmit heat current asymmetrically similar to electronic rectifiers and diodes in microelectronics. Heat can be conduc…

cond-mat.mtrl-sci2017★ 1 cited

Thermal boundary conductance across epitaxial ZnO/GaN interfaces: Assessment of phonon gas models and atomistic Green's function approaches for predicting interfacial phonon transport

John T. Gaskins, George Kotsonis, Ashutosh Giri +13

We present experimental measurements of the thermal boundary conductance (TBC) from 77−500 K across isolated heteroepitaxially grown ZnO films on GaN substrates. These data pro…

cond-mat.mes-hall2017★ 1 cited

Probing Growth-Induced Anisotropic Thermal Transport in CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance

Zhe Cheng, Thomas Bougher, Tingyu Bai +7

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating which degrades device performance…

◍wovepaper

Papers, researchers and institutions, woven together.

Explore
  • Search
  • Researchers
  • Institutions
Account
  • Library
  • Chat
Data
  • arXiv.org
  • Semantic Scholar
  • OpenAlex
  • Latest RSS
AboutContactPrivacyDevelopersllms.txtopenapi.json
Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.