Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al${}_2$O${}_3$ on ${\hat{I}}^2$-Ga${}_2$O${}_3$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al${}_2$O${}_3$ on ${\hat{I}}^2$-Ga${}_2$O${}_3$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$…