Saurav Roy

collaborators

5 papers

physics.app-ph2025

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2

In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…

physics.app-ph2025

Kilovolt-Class $I^^{2} - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $I^^{2} - G a_{2} O_{3}$ drift layers up to 10 $I^¼ m$ thick via MOCVD and the fabrication of k…

physics.app-ph2024

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Yizheng Liu, Saurav Roy, Carl Peterson +2

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…

cond-mat.mtrl-sci2024

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800Â°C. The Al$…

physics.app-ph2024

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $I^¼$ m thick $I^^{2}$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$…

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Kilovolt-Class I^2−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on I^2-Ga2​O3​

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) I^2-Ga2​O3​ Epitaxial Drift Layers

Kilovolt-Class $I^^{2} - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $I^^{2}$ -Ga $_{2}$ O $_{3}$

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $I^^{2}$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers