4 papers · 1 filter
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of k…
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
Yizheng Liu, Saurav Roy, Carl Peterson +2
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…
Record-High Electron Mobility and Controlled Low 10 cm Si-doping in (010) -GaO Epitaxial Drift Layers
Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 m thick -GaO films with electron concentrations in the 10 cm$…