182 citations · 730 across the 28 of their papers we have counts for
25 papers · 1 filter
Measurements and TCAD simulations of innovative RSD and DC-RSD LGAD devices for future 4D tracking
F. Moscatelli, A. Fondacci, R. Arcidiacono +15
This paper summarizes the beam test results obtained with a Resistive Silicon Detector (RSD) (also called AC-Low Gain Avalanche Diode, AC-LGAD) pixel array tested at the DESY beam…
Innovative DC-coupled Resistive Silicon Detector for 4D tracking
R. Arcidiacono, G. Bardelli, M. Bartolini +18
In the past 10 years, two design innovations, the introduction of low internal gain (LGAD) and of resistive read-out (RSD), have radically changed the performance of silicon detect…
First test beam measurement of the 4D resolution of an RSD 450 microns pitch pixel matrix connected to a FAST2 ASIC
L. Menzio, F. Siviero, R. Arcidiacono +13
This paper reports on the spatial and temporal resolutions of an RSD 450 microns pitch pixels array measured at the DESY test beam facility. RSDs, Resistive Silicon Detectors, also…
Resistive Read-out in Thin Silicon Sensors with Internal Gain
N. Cartiglia, F. Moscatelli, R. Arcidiacono +13
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to…
High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
R. Arcidiacono, G. Borghi, M. Boscardin +19
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the sig…
Silicon sensors with resistive read-out: Machine Learning techniques for ultimate spatial resolution
Marta Tornago, Flavio Giobergia, Luca Menzio +8
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduct…
DC-coupled resistive silicon detectors for 4-D tracking
L. Menzio, R. Arcidiacono, G. Borghi +14
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features…
Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
S. M. Mazza, C. Gee, Y. Zhao +24
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutro…
The second production of RSD (AC-LGAD) at FBK
M. Mandurrino, R. Arcidiacono, A. Bisht +15
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD…
Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
B. Darby, S. M. Mazza, F. McKinney-Martinez +22
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and…
Combined analysis of HPK 3.1 LGADs using a proton beam, beta source, and probe station towards establishing high volume quality control
Ryan Heller, Andrés Abreu, Artur Apresyan +14
The upgrades of the CMS and ATLAS experiments for the high luminosity phase of the Large Hadron Collider will employ precision timing detectors based on Low Gain Avalanche Detector…
Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector
R. Abbott, A. Abreu, F. Addesa +196
The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event re…
First application of machine learning algorithms to the position reconstruction in Resistive Silicon Detectors
Federico Siviero, Roberta Arcidiacono, Nicolò Cartiglia +6
RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole s…
Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
M. Tornago, R. Arcidiacono, N. Cartiglia +18
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis…
Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
A. Seiden, H. Ren, Y. Jin +14
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity…
Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
R Padilla, C. Labitan, Z. Galloway +22
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after ir…
Silicon Sensors for Future Particle Trackers
N. Cartiglia, R. Arcidiacono, G. Borghi +17
Several future high-energy physics facilities are currently being planned. The proposed projects include high energy circular and linear colliders, hadron colliders and m…
High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)
M. Mandurrino, N. Cartiglia, M. Tornago +7
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazio…
First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking
M. Mandurrino, R. Arcidiacono, M. Boscardin +8
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-…
Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
S. M. Mazza, E. Estrada, Z. Galloway +24
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation…
First FBK Production of 50m Ultra-Fast Silicon Detectors
V. Sola, R. Arcidiacono, M. Boscardin +8
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diod…
Radiation resistant LGAD design
M. Ferrero, R. Arcidiacono, M. Barozzi +16
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations…
Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm2
Z. Galloway, V. Fadeyev, P. Freeman +27
In this paper we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15, 6e15 n/cm2. The UFSD used…
Test of UFSD Silicon Detectors for the TOTEM Upgrade Project
R. Arcidiacono, M. Berretti, E. Bossini +10
This paper describes the performance of a prototype timing detector, based on 50 micrometer thick Ultra Fast Silicon Detector, as measured in a beam test using a 180 GeV/c momentum…