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Half integer quantum Hall effect in high mobility single layer epitaxial graphene
Xiaosong Wu, Yike Hu, Ming Ruan +5
The quantum Hall effect, with a Berry's phase of is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is 20,000 cm…
Anomalous quantum Hall effect in epitaxial graphene
Xiaosong Wu, Yike Hu, Ming Ruan +5
The observation of the anomalous quantum Hall effect in exfoliated graphene flakes triggered an explosion of interest in graphene. It was however not observed in high quality epita…
Top and side gated epitaxial graphene field effect transistors
Xuebin Li, Xiaosong Wu, Mike Sprinkle +5
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the c…
First direct observation of a nearly ideal graphene band structure
M. Sprinkle, D. Siegel, Y. Hu +10
Angle-resolved photoemission and X-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(000-1) surface is a new form of carbon that is composed of e…