477 citations · 2k across the 23 of their papers we have counts for
12 papers · 1 filter
Wurtzite/Zincblende Crystal Phase GaAs Heterostructures in the Tight Binding Approximation
Joseph Sink, Craig Pryor
Crystal phase semiconductor heterostructures allow for electron confinement without uncertainties caused by chemical intermixing found in material heterostructures and are candidat…
Empirical Tight-Binding Parameters for Wurtzite group III-V(non-Nitride) and IV Materials
Craig Pryor, Joseph Sink
Many commonly used nearest neighbor tight binding models for cubic semiconductors often result in inaccurate band structures when transferred to hexagonal polytypes. The resulting…
Atomistic theory
Craig Pryor, Mats-Erik Pistol
Pseudopotentials, tight-binding models, and theory have stood for many years as the standard techniques for computing electronic states in crystalline solids. Here we pr…
Electronic Structure and Optical Properties of the Lonsdaleite Phase of Si, Ge and diamond
Amrit De, Craig E. Pryor
Crystalline semiconductors may exist in different polytypic phases with significantly different electronic and optical properties. In this paper, we calculate the electronic struct…
Chemical trends of substitutional transition metal dopants in diamond: an ab initio study
Thomas Chanier, Craig Pryor, Michael E. Flatte'
The electronic and magnetic properties of neutral substitutional transition-metal dopants in dia- mond are calculated within density functional theory using the generalized gradien…
Growth and optical properties of self-assembled InGaAs Quantum Posts
H. J. Krenner, C. Pryor, J. He +5
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigatio…
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
C. E. Pryor, M. -E. Pistol
We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calcula…
Lande g factors and orbital momentum quenching in semiconductor quantum dots
Craig E. Pryor, Michael E. Flatté
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities…
Quantum wires from coupled InAs/GaAs strained quantum dots
Craig Pryor
The electronic structure of an infinite 1D array of vertically coupled InAs/GaAs strained quantum dots is calculated using an eight-band strain-dependent k-dot-p Hamiltonian. The c…
Comparison of two methods for describing the strain profiles in quantum dots
C. Pryor, J. Kim, L. W. Wang +2
The electronic structure of interfaces between lattice-mismatched semiconductor is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain -- c…
Eight-band calculations of strained InAs/GaAs quantum dots compared with one, four, and six-band approximations
Craig Pryor
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain dependent Hamiltonian. The influence of strain on band e…
Electronic structure of strained InP/GaInP quantum dots
Craig Pryor, M-E. Pistol, L. Samuelson
We calculate the electronic structure of nm scale InP islands embedded in . The calculations are done in the envelope approximation and include the effects of…