153 citations · 265 across the 8 of their papers we have counts for
5 papers · 1 filter
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
High resolution spectroscopy of individual erbium ions in strong magnetic fields
Gabriele G. de Boo, Chunming Yin, Miloš Rančić +4
In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneousl…
Development of nanowire devices with quantum functionalities
Michael Stuiber, Laurens Willems van Beveren, Brett Johnson +5
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can be…
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
D. R. McCamey, H. Huebl, M. S. Brandt +4
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist…
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
D. R. McCamey, M. Francis, J. C. McCallum +3
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…