664 citations · 2.6k across the 47 of their papers we have counts for
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High-field Magnetotransport Studies of Surface Conducting Diamonds
Kaijian Xing, Daniel L. Creedon, Golrokh Akhgar +5
The observation of strong and tunable spin-orbit interaction (SOI) in surface conducting diamond opens up a new avenue for building diamond-based spintronics. Herein we provide a c…
Deep-level structure of the spin-active recombination center in dilute nitrides
A. C. Ulibarri, C. T. K. Lew, S. Q. Lim +5
A Gallium interstitial defect (Ga) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAsN dilute nitride semiconduc…
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Natalia Alyabyeva, Jacques Ding, Mylène Sauty +7
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon fac…
Phase transformation-induced superconducting aluminium-silicon alloy rings
B. C. Johnson, M. Stuiber, D. L. Creedon +8
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We…
Epitaxial growth of SiC on (100) Diamond
A. Tsai, A. Aghajamali, N. Dontschuk +11
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch ex…
High resolution spectroscopy of individual erbium ions in strong magnetic fields
Gabriele G. de Boo, Chunming Yin, Miloš Rančić +4
In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneousl…
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
L. H. Willems van Beveren, R. Liu, H. Bowers +4
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase…
Development of nanowire devices with quantum functionalities
Michael Stuiber, Laurens Willems van Beveren, Brett Johnson +5
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can be…
Single-photon emitting diode in silicon carbide
A. Lohrmann, N. Iwamoto, Z. Bodrog +7
Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication p…
Engineering chromium related single photon emitters in single crystal diamond
I Aharonovich, S Castelletto, B C Johnson +2
Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently disco…
Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium
B. C. Johnson, P. Gortmaker, J. C. McCallum
The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE…
ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
Paul G. Spizzirri, Wayne D. Hutchison, Nikolas Stavrias +4
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity…
Chromium single photon emitters in diamond fabricated by ion implantation
Igor Aharonovich, Stefania Castelletto, Brett C. Johnson +4
Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of…
Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
D. R. McCamey, H. Huebl, M. S. Brandt +4
We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist…
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
D. R. McCamey, M. Francis, J. C. McCallum +3
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…