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20122023
most citedPhoto-induced Doping in Graphene/Boron Nitride Heterostructures

352 citations · 909 across the 10 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2023★ 138 cited

Orbital Multiferroicity in Pentalayer Rhombohedral Graphene

Tonghang Han, Zhengguang Lu, Giovanni Scuri +8

Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics,…

cond-mat.mes-hall2023★ 150 cited

Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene

Tonghang Han, Zhengguang Lu, Giovanni Scuri +7

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunabil…

cond-mat.mes-hall2021★ 25 cited

Accurate Measurement of the Gap of Graphene/hBN Moiré Superlattice through Photocurrent Spectroscopy

Tianyi Han, Jixiang Yang, Qihang Zhang +5

Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical tr…

cond-mat.mes-hall2016★ 75 cited

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Jairo Velasco, Long Ju, Dillon Wong +11

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and t…

cond-mat.mes-hall2014★ 1 cited

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Dillon Wong, Jairo Velasco, Long Ju +9

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularl…

cond-mat.mes-hall2014★ 81 cited

Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices

Zhiwen Shi, Chenhao Jin, Wei Yang +13

Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phe…

cond-mat.mes-hall2014★ 352 cited

Photo-induced Doping in Graphene/Boron Nitride Heterostructures

L. Ju, J. Velasco, E. Huang +11

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with differen…