352 citations · 909 across the 10 of their papers we have counts for
10 papers
Orbital Multiferroicity in Pentalayer Rhombohedral Graphene
Tonghang Han, Zhengguang Lu, Giovanni Scuri +8
Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics,…
Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene
Tonghang Han, Zhengguang Lu, Giovanni Scuri +7
Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunabil…
Spectroscopy Signatures of Electron Correlations in a Trilayer Graphene/hBN Moiré Superlattice
Jixiang Yang, Guorui Chen, Tianyi Han +12
ABC-stacked trilayer graphene/hBN moiré superlattice (TLG/hBN) has emerged as a playground for correlated electron physics. We report spectroscopy measurements of dual-gated TLG/hB…
Weyl Fermion Magneto-Electrodynamics and Ultra-low Field Quantum Limit in TaAs
Zhengguang Lu, Patrick Hollister, Mykhaylo Ozerov +6
Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. T…
Accurate Measurement of the Gap of Graphene/hBN Moiré Superlattice through Photocurrent Spectroscopy
Tianyi Han, Jixiang Yang, Qihang Zhang +5
Monolayer graphene aligned with hexagonal boron nitride (hBN) develops a gap at the charge neutrality point (CNP). This gap has previously been extensively studied by electrical tr…
Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures
Jairo Velasco, Long Ju, Dillon Wong +11
Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and t…
Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy
Dillon Wong, Jairo Velasco, Long Ju +9
Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularl…
Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices
Zhiwen Shi, Chenhao Jin, Wei Yang +13
Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phe…
Photo-induced Doping in Graphene/Boron Nitride Heterostructures
L. Ju, J. Velasco, E. Huang +11
The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with differen…
Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
B. C. Chapler, S. Mack, L. Ju +11
We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either =0.015 GaMnAs or =3.2 Ga$_{1-x…