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20112023
most citedThe effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

53 citations · 330 across the 18 of their papers we have counts for

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11 papers · 1 filter

cond-mat.mtrl-sci2023★ 20 cited

Large-area synthesis of ferromagnetic FeGeTe/graphene van der Waals heterostructures with Curie temperature above room temperature

H. Lv, A. da Silva, A. I. Figueroa +14

Van der Waals (vdW) heterostructures combining layered ferromagnets and other two-dimensional (2D) crystals are promising building blocks for the realization of ultra-compact devic…

cond-mat.mtrl-sci2021★ 31 cited

Large-area van der Waals epitaxy and magnetic characterization of FeGeTe films on graphene

J. Marcelo J. Lopes, Dietmar Czubak, Eugenio Zallo +8

Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic ap…

cond-mat.mtrl-sci2019★ 1 cited

Lattice matched Volmer-Weber growth of FeSi on GaAs(001) -- the influence of the growth rate

B Jenichen, Z Cheng, M Hanke +2

We investigate the formation of lattice matched single-crystalline FeSi/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the e…

cond-mat.mtrl-sci2019★ 1 cited

Structural properties of CoTiSi films on GaAs(001)

B Jenichen, J Herfort, M Hanke +6

CoTiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray dif…

cond-mat.mtrl-sci2019

Ordered structure of FeGe formed during solid-phase epitaxy

B Jenichen, M Hanke, S Gaucher +7

FeSi/Ge(Fe,Si)/FeSi thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on FeSi). The stacks were analyzed using el…

cond-mat.mtrl-sci2016★ 14 cited

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Thilo Krause, Michael Hanke, Oliver Brandt +1

We study the three-dimensional deformation field induced by an axial (In,Ga)N segment in a GaN nanowire. Using the finite element method within the framework of linear elasticity t…

cond-mat.mtrl-sci2015★ 3 cited

Diffraction at GaAs/FeSi core/shell nanowires: the formation of nanofacets

Bernd Jenichen, Michael Hanke, Maria Hilse +3

GaAs/FeSi core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfa…

cond-mat.mtrl-sci2014★ 25 cited

Picosecond strain dynamics in GeSbTe monitored by time-resolved x-ray diffraction

Paul Fons, Peter Rodenbach, Kirill V. Mitrofanov +9

Coherent phonons (CP) generated by laser pulses on the femtosecond scale have been proposed as a means to achieve ultrafast, non-thermal switching in phase-change materials such as…

cond-mat.mtrl-sci2014★ 53 cited

The effect of the buffer layer coupling on the lattice parameter of epitaxial graphene on SiC(0001)

Timo Schumann, Martin Dubslaff, Myriano H. Oliveira +3

Grazing incidence X-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a $6(\sqrt{3}\times\…

cond-mat.mtrl-sci2014★ 11 cited

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially-resolved luminescence spectroscopy

Jonas Lähnemann, Christian Hauswald, Martin Wölz +4

(In,Ga)N insertions embedded in self-assembled GaN nanowires are of current interest for applications in solid state light emitters. Such structures exhibit a notoriously broad emi…

cond-mat.mtrl-sci2011★ 50 cited

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Jonas Lähnemann, Oliver Brandt, Carsten Pfüller +7

We analyze the emission of single GaN nanowires with (In,Ga)N insertions using both micro-photoluminescence and cathodoluminescence spectroscopy. The emission spectra are dominated…