767 citations · 4.8k across the 48 of their papers we have counts for
19 papers · 1 filter
Insight into the partitioning and clustering mechanism of rare-earth cations in alkali aluminoborosilicate glasses
Hrishikesh Kamat, Fu Wang, Kristian Barnsley +3
Rare-earth (RE) containing alkali aluminoborosilicate glasses find increasingly broad technological applications, with their further development only impeded by yet-poor understand…
Observation of an environmentally insensitive solid state spin defect in diamond
Brendon C. Rose, Ding Huang, Zi-Huai Zhang +9
Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the…
Annealing shallow Si/SiO interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
Jin-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO interface. Here we show that a fo…
ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon
S. Shankar, A. M. Tyryshkin, S. A. Lyon
Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopa…
Decoherence mechanisms of 209Bi donor electron spins in isotopically pure 28Si
Gary Wolfowicz, Stephanie Simmons, Alexei M. Tyryshkin +8
Bismuth (209Bi) is the deepest Group V donor in silicon and possesses the most extreme characteristics such as a 9/2 nuclear spin and a 1.5 GHz hyperfine coupling. These lead to se…
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
R. M. Jock, S. Shankar, A. M. Tyryshkin +7
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…
Electron spin coherence exceeding seconds in high purity silicon
Alexei M. Tyryshkin, Shinichi Tojo, John J. L. Morton +8
Silicon is undoubtedly one of the most promising semiconductor materials for spin-based information processing devices. Its highly advanced fabrication technology facilitates the t…
Coherent state transfer between an electron- and nuclear spin in 15N@C60
Richard M. Brown, Alexei M. Tyryshkin, Kyriakos Porfyrakis +6
Electron spin qubits in molecular systems offer high reproducibility and the ability to self assemble into larger architectures. However, interactions between neighbouring qubits a…
Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
H. Tezuka, A. R. Stegner, A. M. Tyryshkin +5
The electron paramagnetic resonance (EPR) linewidths of B acceptors in Si are found to reduce dramatically in isotopically purified 28Si single crystals. Moreover, extremely narrow…
Spin relaxation and coherence times for electrons at the Si/SiO2 interface
S. Shankar, A. M. Tyryshkin, Jianhua He +1
While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) a…
Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
C. C. Lo, J. Bokor, T. Schenkel +2
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silico…
Spin resonance of 2D electrons in a large-area silicon MOSFET
S. Shankar, A. M. Tyryshkin, S. Avasthi +1
We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to ar…
Stark Tuning of Donor Electron Spins in Silicon
Forrest R. Bradbury, Alexei M. Tyryshkin, Guillaume Sabouret +3
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on top of a Sb-implanted 28Si epi-laye…
Coherence of Spin Qubits in Silicon
A. M. Tyryshkin, J. J. L. Morton, S. C. Benjamin +4
Given the effectiveness of semiconductor devices for classical computation one is naturally led to consider semiconductor systems for solid state quantum information processing. Se…
Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins
Eisuke Abe, Akira Fujimoto, Junichi Isoya +2
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance tech…
Electron spin relaxation of N@C60 in CS2
John J. L. Morton, Alexei M. Tyryshkin, Arzhang Ardavan +3
We examine the temperature dependence of the relaxation times of the molecules N@C60 and N@C70 (which comprise atomic nitrogen trapped within a carbon cage) in liquid CS2 solution.…
Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
T. Schenkel, A. M. Tyryshkin, R. de Sousa +7
We implanted ultra low doses (2x10^11 cm-2) of 121Sb ions into isotopically enriched 28Si and find high degrees of electrical activation and low levels of dopant diffusion after ra…
Electron spin coherence in Si/SiGe quantum wells
J. L. Truitt, K. A. Slinker, K. L. M. Lewis +11
The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six dif…
Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
A. M. Tyryshkin, S. A. Lyon, A. V. Astashkin +1
Pulsed electron paramagnetic resonance measurements of donor electron spins in natural phosphorus-doped silicon (Si:P) and isotopically-purified 28Si:P show a strongly temperature-…