activity
20162023
most citedElectrical and Optical Properties of Heavily Ge-Doped AlGaN

30 citations · 103 across the 8 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2023★ 16 cited

Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture

E. Akar, I. Dimkou, A. Ajay +2

The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication sy…

cond-mat.mtrl-sci2022★ 4 cited

Quantitative analysis of the blue-green single-photon emission from a quantum dot in a thick tapered nanowire

Saransh Raj Gosain, Edith Bellet-Amalric, Eric Robin +5

Quantum dots acting as single photon emitters in the blue-green range are fabricated and characterized at cryogenic temperature. They consist in CdSe dots inserted in (Zn,Mg)Se nan…

cond-mat.mtrl-sci2020★ 12 cited

Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale

C. Bougerol, E. Robin, E. Di Russo +5

Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…

cond-mat.mes-hall2020

Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires

Masiar Sistani, Jovian Delaforce, Roman Kramer +10

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful appl…

physics.app-ph2020

In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots

M. Luong, E. Robin, N. Pauc +6

Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a met…

cond-mat.mtrl-sci2018★ 30 cited

Electrical and Optical Properties of Heavily Ge-Doped AlGaN

R. Blasco, A. Ajay, E. Robin +7

We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…