12 citations · 12 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 12 cited
Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale
C. Bougerol, E. Robin, E. Di Russo +5
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…
cond-mat.mes-hall2020
Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires
Masiar Sistani, Jovian Delaforce, Roman Kramer +10
Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful appl…
physics.app-ph2020
In-situ high resolution TEM observation of Aluminum solid-state diffusion in Germanium nanowires: fabricating sub-10 nm Ge quantum dots
M. Luong, E. Robin, N. Pauc +6
Aluminum-germanium nanowires (NWs) thermal activated solid state reaction is a promising system as very sharp and well defined one dimensional contacts can be created between a met…