12 citations · 12 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2020★ 12 cited
Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale
C. Bougerol, E. Robin, E. Di Russo +5
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…
cond-mat.mtrl-sci2018
Electrical and Optical Properties of Heavily Ge-Doped AlGaN
R. Blasco, A. Ajay, E. Robin +7
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…
cond-mat.mtrl-sci2018
Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires
Marta Orrù, Eric Robin, Martien I Den Hertog +6
The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with C…