38 citations · 229 across the 30 of their papers we have counts for
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Fundamental miniaturization limits for MOSFETs with a monolayer MoS channel
Maksym V. Strikha, Mykola Yelisieiev, Anna N. Morozovska
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in th…
Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in…
Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate
Maksym V. Strikha, Anna N. Morozovska, Zhanna G. Zemska
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are relat…
Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
We revealed that 180 degree ferroelectrics domain walls (FDWs) in a ferroelectric substrate, which induce p-n junctions in a graphene channel, lead to the nontrivial temperature an…
Hysteretic phenomena in GFET: general theory and experiment
Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha
We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external…
Anisotropy of Conductivity in Bilayer Graphene with Relatively Shifted Layers
V. G. Litovchenko, A. I. Kurchak, M. V. Strikha
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to…
Hysteretic phenomena in graphene's conductivity
A. I. Kurchak, A. N. Morozovska, M. V. Strikha
A model for the rival mechanisms of hysteresis in graphene channel resistivity on a substrate of different nature dependence on a gate voltage - a direct one (caused by adsorbates…
Non-volatile memory and IR radiation modulators based upon graphene-on-ferroelectric substrate. A review
Maksym Strikha
I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphe…
Bistable optical system based on hysteresis in the reflectivity of grapheneon- Pb(ZrxTi1-x)O3
M. Strikha
We analyse a model describing hysteretic behaviour of the reflectivity R for the system 'graphene-Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate-gate' with a gate voltage variation,…
Modulation of mid-IR radiation by a gated graphene on ferroelectric substrate
Maksym Strikha
The possibility of modulation of mid-IR radiation by low voltage gated single/multilayer graphene on Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate was demonstrated theoretically. Th…
Carrier-induced modulation of radiation by a gated graphene
M. V. Strikha, F. T. Vasko
The modulation of the transmitted (reflected) radiation due to change of interband transitions under variation of carriers concentration by the gate voltage is studied theoreticall…
Electrooptics of graphene: field-modulated reflection and birefringence
M. V. Strikha, F. T. Vasko
The elecrooptical response of graphene due to heating and drift of carriers is studied theoretically. Real and imaginary parts of the dynamic conductivity tensor are calculated for…