38 citations · 229 across the 30 of their papers we have counts for
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Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin +1
Nanosized hafnia-zirconia HfxZr1-xO2 in the form of thin films, multilayers and heterostructures are indispensable silicon-compatible ferroelectric materials for advanced electroni…
Domain Morphology, Electrocaloric Response, and Negative Capacitance States of Ferroelectric Nanowires Array
Anna N. Morozovska, Oleksii V. Bereznykov, Maksym V. Strikha +4
We analyzed the domain morphology, electrocaloric response, and negative capacitance states in a one-dimensional array of uniformly oriented, radial symmetric ferroelectric nanowir…
Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors
Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii +2
Analytical calculations corroborated by the finite element modelling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for…
An effective Landau-type model of HfZrO thin film - graphene nanostructure
Anna N. Morozovska, Maksym V. Strikha, Kyle P. Kelley +2
To describe the charge-polarization coupling in the nanostructure formed by a thin HfZrO film with a single-layer graphene as a top electrode, we develop the "effec…
Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
Eugene A. Eliseev, Anna N. Morozovska, Maksym V. Strikha
We calculated a spin-polarized conductance in the almost unexplored nanostructure "high temperature ferromagnetic insulator/ graphene/ ferroelectric film" with a special attention…
Gate Voltage Control of Transition Metal Dichalcogenide Monolayers Quantum Yield
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it h…
Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics
Anatolii I. Kurchak, Anna N. Morozovska, Maksym V. Strikha
The conductivity of the system magnetic dielectric (EuO) - graphene channel - ferroelectric substrate was considered. The magnetic dielectric locally transforms the band spectrum o…
Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
Maksym V. Strikha, Anatolii I. Kurchak, Anna N. Morozovska
Review is devoted to the recent theoretical studies of the impact of domain structure of ferroelectric substrate on graphene conductance. An analytical description of the hysteresi…
Nontrivial temperature behavior of the carrier concentration in the nanostructure "graphene channel on ferroelectric substrate with domain walls"
Anatolii I. Kurchak, Anna N. Morozovska, Sergei V. Kalinin +1
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelect…
Effect of surface ionic screening on polarization reversal scenario in ferroelectric thin films: crossover from ferroionic to antiferroionic states
Anna N. Morozovska, Eugene A. Eliseev, Anatolii I. Kurchak +4
Nonlinear electrostatic interaction between the surface ions of electrochemical nature and ferroelectric dipoles gives rise to the coupled ferroionic states in nanoscale ferroelect…
P-N junctions dynamics in graphene channel induced by ferroelectric domains motion
Anatolii I. Kurchak, Eugene A. Eliseev, Sergei V. Kalinin +2
The p-n junctions dynamics in graphene channel induced by stripe domains nucleation, motion and reversal in a ferroelectric substrate is explored using self-consistent approach bas…
Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
Maksym V. Strikha, Anna N. Morozovska
Here we present the theory of the conductivity of pn junction (pnJ) in graphene channel, placed on ferroelectric substrate, caused by ferroelectric domain wall (FDW) for the case o…
Ballistic conductivity of graphene channel with p-n junction on ferroelectric domain wall
Anna N. Morozovska, Eugene A. Eliseev, Maksym V. Strikha
We study the impact of the ferroelectric domain wall on the ballistic conductance of the single-layer graphene channel in the heterostructure graphene / physical gap / ferroelectri…
Finite size effects of hysteretic dynamics in multi-layer graphene on ferroelectric
A. N. Morozovska, A. S. Pusenkova, O. V. Varenyk +3
The origin and influence of finite size effects on the nonlinear dynamics of space charge stored by multi layer graphene on ferroelectric and the resistivity of graphene channel we…
Ferroelectric domain triggers the charge modulation in semiconductors
Anna N. Morozovska, Eugene A. Eliseev, Anton V. Ievlev +6
We consider a typical heterostructure domain patterned ferroelectric film/ultra thin dielectric layer/ semiconductor, where the semiconductor can be an electrolyte, paraelectric or…
Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface
Anna N. Morozovska, Maksym V. Strikha
Using continuous approximation we study the static and high-frequency heat dissipation in multi-layer graphene on a ferroelectric. We demonstrate that the Joule heating effect, cau…
Thermal-radiation-induced nonequilibrium carriers in an intrinsic graphene
P. N. Romanets, F. T. Vasko, M. V. Strikha
We examine an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature T_r, other than T. The distribution of no…